Method for producing low dielectric coatings from hydrogen silsequioxane resin

摘要

This invention pertains to a method of producing low dielectric coatings from hydrogen silsesquioxane resin. The method for producing the coatings comprises applying a film of hydrogen silsesquioxane resin onto a substrate and thereafter curing the film by first heating at a temperature of about 325 DEG C. to 350 DEG C. thereafter heating at a temperature of about 400 DEG C. to 450 DEG C. until the normalized SiH bond density is 50 to 80%. This two step curing process produces films having lower dielectric constant and improved mechanical properties.