| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a process for producing a liquid crystal display device capable of reducing a production cost and shortening a work period by making the number of the photomasks to be used smaller than in the conventional processes. SOLUTION: After a Cr film is deposited on a glass substrate 21, this film is patterned to form gate electrodes 22 and gate wiring. An SiNx film 37 (gate insulating film 23) an a-Si film 38, an a-Si:n<+> film 39 and an Al film 40 are successively deposited thereon. The Al film 40 and the a-Si:n<+> film 39 are patterned by using the same mask to form source electrodes 26, source wiring and drain electrodes 27 and simultaneously an ohmic contact layer 25 is formed. Next, a passivation film 28 is deposited. The passivation film 28, the a-Si film 38 and the SiNx film 37 are patterned by using the same mask, by which thin- film transistors 20 are formed and, thereafter, an ITO film is deposited and is patterned to form pixel electrodes 30.</p> |
