发明名称 INPUT BUFFER FOR SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To provide an input buffer for a semiconductor memory. SOLUTION: The buffer comprises a differential amplifier 21 for amplifying the difference between a reference voltage DREF and external applied input signal INPUT and switching unit 21 for selecting and transferring an external power feed voltage EVC to the amplifier 21 under the condition of an SSTL interface where the reference voltage VREF and signal INPUT dependently vary according to the feed voltage EVC, or for selecting and transferring an internal power feed voltage IVC to the amplifier 21 under the condition of an LVTTL interface where the reference voltage VREF and signal INPUT hold const. levels, irrespective of the variation of the feed voltage EVC, thus operating stably.</p>
申请公布号 JPH11134864(A) 申请公布日期 1999.05.21
申请号 JP19980202259 申请日期 1998.07.16
申请人 SAMSUNG ELECTRON CO LTD 发明人 KO SHOSHUN;KANG KYUNG-WOO
分类号 G11C11/417;G11C7/00;G11C11/407;G11C11/409;H03K19/0175;H03K19/0185;(IPC1-7):G11C11/409;H03K19/017 主分类号 G11C11/417
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