发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve a light-emitting efficiency of a light-emitting element using silicon, and to perform electrical control. SOLUTION: Silicon of a light-emitting part is turned to a crystallite 12 composed of the crystal of a size less than 10 nm for making a quantum size effect appear. An insulation film of a thickness less than 5 nm is formed around the crystallite 12, and a fine structure part 14 is held between semiconductors of a P-type and an N-type. The P-type semiconductor 11 and the N-type semiconductor 15 are electrically jointed only at the fine structure part, and the other part is electrically insulated by the insulation film or the like. Electrons and electron holes are injected into the crystallite 12 by a tunnel and recombined efficiently and light is emitted.
申请公布号 JPH11135830(A) 申请公布日期 1999.05.21
申请号 JP19980178278 申请日期 1998.06.25
申请人 TOSHIBA CORP 发明人 FUJITA SHINOBU;KUROBE ATSUSHI
分类号 H01L29/06;H01L27/12;H01L27/15;H01L29/66;H01L33/04;H01L33/16;H01L33/34;H01L33/44 主分类号 H01L29/06
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