GALLIUM NITRIDE GROUP COMPOUND SEMICONDUCTOR WAFER AND COMPOUND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a wafer for which a gallium nitride group compound semiconductor crystal of high carrier density is grown on the surface. SOLUTION: On the surface of this gallium nitride group compound semiconductor wafer W1 grown through an MOCVD method with good uniformity, a (p)-type GaN layer 8 is grown by a liquid phase growth method with easily producing high carriers. In particular, it is effective for obtaining the gallium nitride group compound semiconductor wafer of a structure provided with a high carrier (p)-type layer on the surface which is difficult to constitute by the MOCVD method.