| 摘要 |
<p>PROBLEM TO BE SOLVED: To significantly shorten a data transfer duration and to improve pattern quality by easily and quickly performing pattern drawing adjacent to a boundary part, when a pattern part to where plural kind functional pattern regions are arranged to be adjacent is drawn. SOLUTION: A semiconductor device pattern in which a first functional pattern region C performing a first function constituted of plural first unit patterns C1 ...CN and a second functional pattern region P performing a second function comprised of plural second unit patterns P1 ...PN are provided adjacent is drawn by a pattern drawing method. In this case a drawing strength of shot data at the first functional pattern part C is made by adding to a calculated value by proximity effect correction processing related to an axis direction to a value obtained by multiplying an proximity effect correction value regarding another axis direction and a first coefficient made to a constant value, and by adding a value obtained by multiplying a calculated value by proximity effect correction processing regarding an axis direction at another functional pattern region P to a second coefficient made to a constant value of an proximity effect correction value regarding another axis direction.</p> |
