| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a capacitor, including an improved preprocessing method carried out prior to di-tantalum pentoxide (Ta2 O5 ) dielectric film being deposited on a HSG lower electrode. SOLUTION: Two stages of rapid heat nitriding processing, consisting of primary and secondary rapid heat nitriding processing, is carried out on a semiconductor substrate on which a HSG lower electrode is formed. Preferably a primary rapid heat nitriding processing 104 be carried out in an ammonium gas atmosphere under a temperature condition of 800±40 deg.C for 180±60 seconds, and that the secondary rapid head nitriding processing 106 be carried out in an ammonium gas atmosphere under a temperature condition of 850±40 deg.C for 180±60 seconds. Thus, flocculation to the HSG-shaped lower electrode is restrained, and an oxide carrier film having a sufficient thickness can be formed. Therefore, cell capacitance can be increased. |
