| 摘要 |
PROBLEM TO BE SOLVED: To reduce manufacturing process, by obtaining a lower electrode of a capacitor comprising the electrode lower layer at the lower part and the electrode upper layer at the lower part, and obtaining a silicon layer constituting a part of source/drain. SOLUTION: In a memory region 11a at the surface side of a substrate 11, a memory element 1a in DRAM constitution having a capacitor is formed. In a logic region 11b, a logic element 1b having an S/D 31 comprising an S/D diffused layer 23, and an S/D 31 comprising a silicon layer 27 and a silicide film 27A at the upper surface of the layer 23, are provided. This logic element 1b is formed. Then, a lower-electrode upper layer 27 a constituting a part of the lower electrode of a capacitor is formed. At the same time, a silicon layer 27 constituting a part of the S/D 31 in the logic element is formed. Therefore, the manufacturing process of a semiconductor device can be reduced. |
