COMPOSITE-TYPE DUAL-GATE MOSFET AND HIGH-FREQUENCY DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To obtain a compact dual-gate MOSFET with high isolation. SOLUTION: Two dual gate MOSFETs are mounted in one package 24, a second gate is connected between first gate terminals 31 and 32 of each of the dual gate MOSFETs in the package 24 and is led out of the package as a common terminal 33. At the same time a source is connected between drain terminals 36 and 37 in the package 24 and is led as the common terminal, thus achieving high isolation between the first and second MOSFETs.