| 摘要 |
PROBLEM TO BE SOLVED: To prevent the short circuit of a light-emitting element and to improve reliability by forming at least one of electrodes by using the metal, whose thickness is made thicker through plating. SOLUTION: On an N-type semiconductor layer 11 which is to become a semiconductor wafer, a P-type semiconductor layer 12 is formed, and a P-N junction is constituted. Au electrodes 14 and 15 are formed at both surfaces of the semiconductor wafer. On the Au electrodes 14 and 15, terminal electrodes 16 and 17, whose films are made thick by laminating the metal formed through solder plating, are formed. Then, the semiconductor wafer is stuck to an adhesive tape, and full die cutting is performed by dicing. The LED wafer is divided into a plurality of LED chips 10. Then, anisotropic conducting pastes 23 and 24 are applied on patterns 21 and 22. The LED chips 10 are provided. The anisotropic pastes 23 and 24 are hardened by heating, and the LED chips 10 are fixed. The interval between the P-N junction surface and the pattern of the substrate is formed large, and the reliability can be improved. |
