| 摘要 |
PROBLEM TO BE SOLVED: To obtain an AlGaInP based semiconductor laser in which self-excited oscillations take place suitably by increasing the dopant concentration of a saturable absorption layer, while suppressing diffusion thereof. SOLUTION: A GaInP based saturable absorption layer 7 is doped simultaneously with two kinds or more of dopand, e.g., Zn and Se. Consequently, the concentration of Zn is not required to increase significantly and significant increase of diffusion can be prevented. Since n-type impurities, i.e., Se, suppress the diffusion of p-type impurities, i.e., Zn, the deterioration of laser characteristics due to the diffusion of Zn into an active layer 4 can be suppressed. |
