| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve throughput and to reduce a cost by arranging reflection electrodes on rugged patterns formed by using part of a material layer to be formed at the time of constituting switching elements, thereby suppressing the increase in the number of production stages for imparting scattering characteristics and/or directivity to the reflection electrodes. SOLUTION: Gate electrodes 22 and gate wiring are formed in order to constitute the switching elements 60 on an insulating substrate 11. An insulating layer 31 is then formed and further, a semiconductor layer 51 is formed. Drain circular patterns 41 are thereafter formed together with drain wiring 23, drain electrodes 24 and source electrodes 25. The insulating layer 32 consisting of an insulating material of SiN, SiO2 is deposited on the insulating substrate 11 formed with the drain circular patterns 41. The ruggedness reflecting the drain circular patterns 41 appears on the surface of the insulating layer 32. The reflection electrodes 27 are formed on the insulating layer 32 by using metallic materials, such as Al and Ag, having high reflectivity.</p> |
