| 摘要 |
PROBLEM TO BE SOLVED: To prevent the oxidation of polysilicon which forms a lower electrode in heat treating by forming a TiO film from a TiN film through heat-treatment in an oxygen-free atmosphere, in a capacitor manufacturing process. SOLUTION: After forming a lower electrode 106 on a silicon wafer 101, a TiN film 107 and a RuO2 film 108 are formed, and this Si wafer 101 is heat- treated in atmosphere which does not include oxygen. Then, a dielectric film consisting of a TiO2 film 109 and an upper electrode consisting of a Ru film 110 are obtained. |
