| 摘要 |
PROBLEM TO BE SOLVED: To reduce a cost and to improve productivity, reliability and quality without deteriorating the characteristics of various elements formed on a silicon substrate by forming multiple step structures at one time by one time of etching using masks (silicon oxide films) of different thicknesses deposited by an anodic oxidation method. SOLUTION: A recessed part 4 formed on the substrate 1 consisting of single crystal silicon houses a semiconductor laser element 5 in a first step part 7 and forms a micromirror 6 on a light exit part 2 and one side wall surface in a second step part 8 lower than this part. First and second mask forming stages of depositing the first mask on the region where the recessed part 4 of the substrate 1 is not formed and depositing the second mask of the thickness smaller than the thickness of the first mask on the region where the first step part 7 is formed are executed. The first and second masks are the silicon oxide films and thereafter, the exposed region of the substrate 1 are etched to form the second step part 8 and simultaneously to annihilate the second mask, by which the formation of the first step part 7 at a low cost is made possible. |
