III-V COMPD. SEMICONDUCTOR, MANUFACTURE THEREOF AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a III-V compd. semiconductor with a thin film having an embedded structure, III-V compd. semiconductor, and III-V compd. semiconductor light-emitting element. SOLUTION: This III-V compd. semiconductor has a pattern 2 made of a material different from first and second III-V compd. semiconductors on a layer of the first III-V compd. semiconductor 1 shown by Inu Gav Alw N (0<=u, v, w<=1, u+v+w=1) and a layer 2 of the second III-V compd. semiconductor shown by Inx Gay Alz N (0<=x, y, z<=1, x+y+z=1) on the first III-V compd. semiconductor and the pattern 2 which is a line pattern of 1.0 μm wide or less, approximately parallel to the (1-100) orientation of the first III-V compd. semiconductor and made of the III-V compd. semiconductor.