DOPANT CONCENTRATION MEASURING METHOD OF SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a dopant concentration measuring method of a silicon wafer which can measure dopant concentration in a noncontact manner with the silicon wafer. SOLUTION: Absorbance difference A of infrared radiation between a sample silicon wafer which contains dopant and has a thickness of (d) and a reference silicon wafer which does not contain dopant and has practically the same thickness (d) is measured. The carrier absorption coefficientαe (cm<-1> ) is calculated by a formula,αe =A/loge/d (loge=0.4343). The dopant concentration N(cm<-3> ) is obtained on the basis of a formula of dispersion theory regarding the carrier absorption coefficientαe (cm<-1> ) and Irvin curve which gives the relation between the dopant concentration N and the resistivity R.