| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for forming a contact of a semiconductor device which increases the margin of an interlayer insulator and improves a step coverage. SOLUTION: A semiconductor substrate 100 is wholly wet-etched to etch an interlayer insulator 102 on both sides of a contact hole, wherein the interlayer insulator 102 is etched slantwise such that the upper portion of the contact hole is wider than the lower portion thereof. This is because the upper surface of the interlayer insulator 102 exposed by a masking film 108 is etched more quickly than the interlayer insulator 102 on both walls of the contact hole and at the boundary of the masking film 108. Wet-etching is used for vertically etching the interlayer insulator 102 to substantially improve the degree of integration of an element, in particular, a separating margin between the elements in the horizontal direction.</p> |
