| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element for eliminating the generation of dislocations from an upper electrode side and the decline in emitted light intensity. SOLUTION: A semiconductor light-emitting element is formed by laminating a buffer layer 2, one conductive type semiconductor layer 3 and a reverse conductive type semiconductor layer 4 on a substrate 1 and provided with electrodes 6 and 7 for making a current flow to the one conductive type semiconductor layer 3 and the reverse conductive type semiconductor layer 4. On the reverse conductive type semiconductor layer 4 or in the reverse conductive type semiconductor layer 4, the layer 4a of a grating constant different from one of the reverse conductive type semiconductor layer 4 is provided. |
