MANUFACTURE OF INSULATED-GATE FIELD-EFFECT SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To manufacture a TFT using a small number of masks. SOLUTION: A TFT has a structure, wherein an anodic oxide film 10 provided of a material constituting a gate electrode 8 is formed on the side face of the gate electrode 8, an electrode which is connected to a source-drain region 3 comes into contact with the surface and the side face of the source-drain region 3, and the electrode which is connected to the source-drain region is extended up to the upper part of an insulating film 11 which is formed at the upper part of the gate electrode 8. In its manufacturing process, the TFT can be completed by using three masks.