| 摘要 |
PROBLEM TO BE SOLVED: To work a wiring film pattern into an exact desired shape and to prevent a wiring film from being etched at opening a contact hole. SOLUTION: This manufacture is provided with a process for forming a CVD oxidized film 108 on a semiconductor substrate 1, the process for forming a thermally oxidized film 109 on the CVD oxidized film 108, the process for forming a conductive film composed of a polycrystalline silicon film 110/tungsten silicide film 111, the process for forming a silicon nitride film 112 on the conductive film, the process for forming the CVD oxidized film 112 on the silicon nitride film 112, the process for patterning a CVD oxidized film 113 and the silicon nitride film 112 into a prescribed shape, the process for patterning the conductive film into the prescribed shape with the CVD oxidized film 113 and the silicon nitride film 112 as a mask, the process for removing the CVD oxidized film 113, the process for forming a nitride film sidewall and the process for forming the contact hole which reaches the semiconductor substrate 1. |
