发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To enable a high speed of a memory access by forming a signal transmission path of a length enough to intersect a memory array, by a method wherein a main amplifier and a Y decoder are disposed at both ends across the memory array. SOLUTION: If a Y address is inputted, it is passed through an address buffer ADDBUP and transmitted to a Y decoder YDC disposed on a circumferential side of a chip via a relief circuit RED and a predecoder PDC provided in an intermediate part of a memory array, and a Y selection signal is formed therein. A complementary bit line of one sub-array is selected from the Y selection signals, which are transmitted to a main amplifier MA on a center part side of the chip counter thereto, and are amplified and outputted through an output circuit. Accordingly, in an intermediate part leading from the center part to a portion where an address decoder is provided, a predecoder for decoding an address signal is disposed, whereby it is possible to shorten a signal transmission path while avoiding a jam of wirings, and to contrive a high speed.
申请公布号 JPH11135753(A) 申请公布日期 1999.05.21
申请号 JP19970309834 申请日期 1997.10.24
申请人 HITACHI LTD 发明人 FUJISAWA HIROKI;NAKAMURA MASAYUKI
分类号 G11C11/401;G11C5/02;G11C8/10;G11C11/407;G11C11/409;H01L21/8242;H01L27/108 主分类号 G11C11/401
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