| 摘要 |
PROBLEM TO BE SOLVED: To prevent a decline of emitted light intensity when an Al mixed crystal ratio (x) is reduced. SOLUTION: A semiconductor substrate 1, for which an (n)-type Alx Ga1-x As layer 1a of (x)=0.15 is formed on a surface, is prepared (a), and a diffusion mask film (insulation film) 2 provided with an opening part 2a is formed on it (b). Then, a diffusion source film 3, containing Zn to be (p)-type impurities is formed on it, and an annealing cap film 4 is formed on it (c). Then, Zn is diffused from the diffusion source film 3 to the (n)-type layer 1a at the opening part 2a by a diffusion anneal processing, and a (p)-type Alx Ga1-x As area 5 is formed. Thereafter, the diffusion source film 3 and the annealing cap film 4 are removed, and a (p)-side electrode in contact with the (p)-type region 5 is provided. The (p)-side electrode is brought into ohmic contact with the (p)-type region 5 since (x) is small, the (p)-type region of high density is formed, since a GaAs contact layer is not provided on a substrate surface as before, and thus a current is spread and the declined in the emitted light intensity is prevented. |
