| 摘要 |
PROBLEM TO BE SOLVED: To perform all overlay of pattern and reticule pattern at a minimum pattern alignment frequency, by performing overlay of reticule pattern and a plurality of patterns at a single alignment, related to a pattern formation method wherein, in separate patterning processes, a pattern on a reticule is formed so as to overlay a plurality of patterns formed on a substrate. SOLUTION: A process where the relative displacement of a plurality of patterns 26a and 26b is calculated, a process where a film and a negative photo- resist film are formed on a substrate, a process where exposure is performed so as to comprise the relative displacement with exposure position changed once or more to form a latent image of the pattern on a reticule, a process where the photo-resist film is developed to form a pattern of it, and a process where, with the pattern of photo-resist film as a mask, a film is etched to form one or more patterns 27 and 28 overlaying the plurality of patterns 26a and 26b, are provided. |
