发明名称 SENSING AMPLIFIER AND NONVOLATILE MULTIVALUE MEMORY DEVICE USING THE SENSING AMPLIFIER
摘要 <p>PROBLEM TO BE SOLVED: To provide a sensing amplifier with a wide output voltage range. SOLUTION: A sensing amplifier consists of a memory cell 1 in which multivalue information can be stored, a current mirror circuit 2 by which the drain current of the memory cell 1 corresponding to a drain voltage generated in accordance with the multivalue information is reversed, a transistor 3 which has the same construction as the memory cell 1 and to which the output current of the current mirror circuit 2 is supplied and a voltage generating circuit 4 which applies a voltage to the floating gate of the transistor 3. By switching the voltage of the voltage generating circuit 4 so as to match the charge in the floating gate of the transistor 3 with the charge in the floating gate of the memory cell 1, the impedance of the transistor 3 can be varied, so that an output voltage range can be widened.</p>
申请公布号 JPH11134890(A) 申请公布日期 1999.05.21
申请号 JP19970300566 申请日期 1997.10.31
申请人 SANYO ELECTRIC CO LTD 发明人 HAGIWARA HARUO;UCHINO TAKASHI
分类号 G11C11/416;G11C16/02;G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C11/416
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