SELF-CLEANING ETCH PROCESS

摘要

A process for etching a substrate (25) in an etching chamber (30), and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls (45) and components of the etching chamber (30). In the etching step, process gas comprising etchant gas is used to etch a substrate (25) in the etching chamber (30) thereby depositing etch residue inside the chamber (30). Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber (30), during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.