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发明名称
Verfahren zur Herstellung eines Halbleiterbauteils mit vergrabenem Übergang
摘要
申请公布号
DE69415500(T2)
申请公布日期
1999.05.20
申请号
DE19946015500T
申请日期
1994.03.31
申请人
STMICROELECTRONICS S.R.L., AGRATE BRIANZA, MAILAND/MILANO, IT
发明人
PALMIERI, MICHELE, I-20019 SETTIMO MILANESE, MILANO, IT;DEPETRO, RICCARDO, I-28037 DOMODOSSOLA, NOVARA, IT
分类号
H01L21/8249;H01L21/225;H01L21/265;H01L21/329;H01L21/331;H01L21/337;H01L21/822;H01L27/06;H01L29/73;H01L29/866;(IPC1-7):H01L21/82
主分类号
H01L21/8249
代理机构
代理人
主权项
地址
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