发明名称 |
A fabrication method for semiconductor devices |
摘要 |
<p>A fabrication method for semiconductor devices connecting a multi-crystal semiconductor thin film and a semiconductor region including a high density of an impurity formed in a single crystal semiconductor substrate. After forming a N-type semiconductor region as the emitter by ion implanting, for instance, as into a P-type semiconductor region as the base, a polysilicon thin film 114 is deposited so as to be implanted with As ions and then heat treated. In this case, an amorphous portion of the N-type semiconductor region and an amorphous silicon thin film in contact therewith are transformed by solid phase epitaxial growth so as to form a single crystal semiconductor region, a single-crystalline silicon thin film, and a polysilicon thin film, thus forming a bipolar element having an emitter. <IMAGE></p> |
申请公布号 |
EP0466195(B1) |
申请公布日期 |
1999.05.19 |
申请号 |
EP19910111743 |
申请日期 |
1991.07.15 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KAMEYAMA, SHUICHI;HORI, ATSUSHI;SHIMOMURA, HIROSHI;SEGAWA, MIZUKI |
分类号 |
H01L21/20;H01L21/265;H01L21/285;H01L21/331;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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