| 摘要 |
An insulation film (2) is formed on a first single crystal silicon substrate (1), e.g., a hydrogen anneal substrate, an intrinsic gettering substrate and an epitaxial substrate. Hydrogen implantation is carried out from a surface of this insulation film, thereby forming a hydrogen implantation region in the first single crystal silicon substrate. Then, by carrying out a thermal treatment at 400 to 500 DEG C, voids (4) are formed in the hydrogen implantation region, and the first single crystal silicon substrate is cleaved therefrom. Next, the surface of the insulation film and a surface of a second single crystal silicon substrate (5) are laminated and then, they are subjected to a thermal treatment at 1,000 DEG C or higher. With this method, a bad influence on a device can be reduced and a yield can be enhanced. <IMAGE> |
