Etching of platinum film to form electrode

摘要

Platinum is etched using a mask with high selectivity relative to platinum and an etchant gas having a high platinum/mask etching ratio. A platinum etching process comprises: (i) depositing a platinum layer on an insulator; (ii) depositing a masking layer with high selectivity relative to platinum on the platinum layer; (iii) structuring the masking layer to provide a predetermined aperture spacing; and (iv) injecting an etchant gas, having a platinum/masking layer etching ratio of more than 2, for etching the platinum layer. An Independent claim is also included for a similar process in which an adhesion layer is initially deposited on the insulator and is subsequently etched using the masking layer and the etched platinum layer as masks.