发明名称 |
Method for fabricating a DMOS transistor |
摘要 |
Disclosed is an improved method for fabricating double-diffused MOS (DMOS) transistors, comprising the steps of thermally oxidizing a previously formed oxide layer on a semiconductor substrate to form a partially and relatively thick oxide layer before performing a POCl3 doping. During the POCl3 doping to render a conductivity to a gate polysilicon layer, phosphorus of the POCl3 can not be penetrated into the substrate through the relatively thick oxide layer. A completed DMOS device has the channel region in the P type body and in the source/drain region which has an ununiform provision of impurity concentration, and results in increase of a withstanding voltage. <IMAGE> |
申请公布号 |
EP0851507(A3) |
申请公布日期 |
1999.05.19 |
申请号 |
EP19970302440 |
申请日期 |
1997.04.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHA, SEUNG-JOON |
分类号 |
H01L29/78;H01L21/265;H01L21/336;H01L21/8234;H01L27/04;H01L29/10 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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