Method of forming wiring structure

摘要

After wiring patterns are formed on an insulating film covering the surface of a substrate, an insulating film such as plasma CVD SiO2 is formed covering the wiring patterns. A hydrogen silsesquioxane resin film with a flat surface is formed by spin coating or the like on the insulating film. Thereafter, the resin film is changed into a pre-ceramic silicon oxide film by performing heat treatment in an inert gas atmosphere. On this pre-ceramic silicon oxide film, an insulating film such as plasma enhanced CVD SiO2 film is formed and another wiring layer is formed on the insulating film. This method of forming a multi-layer wiring structure allows an interlayer insulating film to be planarized, and improves a yield of wiring formation.