A process and structure are disclosed for a programmable array for use in a read-only memory comprising diode elements and shorted diode elements. The elements are connected across bit and wordlines. The invention utilizes lateral polysilicon diodes and metal silicide layer bridging the junction of pre-selected diodes to short pre-selected diode elements. Programming is accomplished by either forming the silicide layer across the junctions of pre-selected diodes or removing the silicide layer from the junctions of pre-selected diodes.
申请公布号
US5905670(A)
申请公布日期
1999.05.18
申请号
US19970855186
申请日期
1997.05.13
申请人
INTERNATIONAL BUSINESS MACHINES CORP.
发明人
BABSON, GORDON M.;BROUILLETTE, ALLEN W.;EVANS, RICHARD J.;FINCH, ROBERT J.;NOEL, PHILIP H.;ROSS, RICHARD J.