| 摘要 |
PROBLEM TO BE SOLVED: To regenerate the subject dense protective film within a temperature range attainable for a heat treatment oven for producing semiconductors, by heat treatment, at each specific oxygen concentration and temperature, of a molybdenum disilicide-based exothermic element where an oxidation-protective film has been broken. SOLUTION: This regeneration is accomplished by heat treatment of a molybdenum disilicide-based exothermic element under such conditions as to be 0.1-7.0 vol.% in the oxygen concentration of the atmosphere and 850-1,200 deg.C in temperature. The thickness of the protective film to be regenerated is >=0.5 μm. The temperature range attainable for a heat treatment oven is <=1,200 deg.C. The control of the oxygen concentration is carried out using an inert gas such as nitrogen or argon. Heat treatment time is pref. <=24 h from a practional point of view. This regeneration method is applicable to MoSi2 single-phase exothermic elements, (Mo1-x Wx )Si2 exothermic elements ((x) <=0.45), and composite exothermic elements complexed with oxide(s) such as Al2 O3 , SiO2 , ZrO2 or HfO2 , or compound(s) such as MoB, Mo2 B, MoB2 , Mo2 B5 , WB, W2 B, WB2 , W2 B5 , SiC, HfB2 , ZrB2 , TiB2 , TiB, HfC, ZrC, TiC or Si3 N4 . |
