| 摘要 |
A polymer having a unit expressed as "-CH2CHR-" as well as a substituent capable of being decomposed by acid is employed as a base resin for a resist material. The resist material is further mixed with an acid generator. A resist pattern obtained by selectively exposing and developing the resist material is irradiated with light having a wavelength of not more than 300 nm under a nitrogen atmosphere. Active hydrogen at the alpha -position of the unit dissociates as a result to form polymer radicals, which are linked with each other in progress of a crosslinking reaction. Namely, a crosslinked structure of the polymer is formed. Consequently, a resist pattern having high dry etching resistance is completed.
|
