发明名称 |
Method and apparatus incorporating nitrogen selectively for differential oxide growth |
摘要 |
A method for forming an oxide on the surface of a semiconductor substrate. The method includes the steps of: placing the semiconductor substrate in an atmosphere containing an atmosphere of an oxide growth inhibiting compound; applying laser energy to at least a first portion of the substrate; and forming the oxide on the surface of the substrate by heating the substrate. In a further aspect of the invention, the method comprises applying laser energy through a patterned, reflective reticle. Alternatively, prior to the step of placing, a reflective mask layer may be applied to the surface of the semiconductor substrate. In addition, the invention comprises an EEPROM memory cell having a program junction region in a semiconductor substrate. The cell comprises at least a first program junction provided in the silicon substrate and a floating gate having a portion positioned over the program junction. In addition, an oxide layer is positioned between the program junction and the floating gate, the gate oxide formed by a single thermal oxidation step to have at least a first oxide thickness and a second oxide thickness due to gas immersion laser doped nitrogen underlying a region of the oxide having said at least first oxide thickness.
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申请公布号 |
US5904575(A) |
申请公布日期 |
1999.05.18 |
申请号 |
US19970799153 |
申请日期 |
1997.02.14 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
ISHIDA, EMI;LI, XIAO-YU;MEHTA, SUNIL D. |
分类号 |
H01L21/265;H01L21/266;H01L21/316;H01L21/8234;H01L27/115;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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