发明名称 |
Method of fabricating high density semiconductor read-only memory device |
摘要 |
A ROM device of the type including an array of diode-type memory cells and a method for fabricating the same are provided. The bit lines of this ROM device are a plurality of diffusion regions formed in an alternate manner on the bottom of a plurality of parallel-spaced trenches and on the top of the solid portions between these trenches. This particular arrangement of the bit lines allows for an increased integration of the diode-type memory cells on a limited wafer surface without having to reduce the feature size of the semiconductor components of the ROM device. The diode-type memory cells that are set to a permanently-ON state involve a P-N junction diode being formed therein, wherein the P-N junction diode is electrically connected via a contact window in an insulating layer to the associated one of the overlaying word lines. Other memory cells that are set to a permanently-OFF state are formed with no P-N junction diode therein.
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申请公布号 |
US5904526(A) |
申请公布日期 |
1999.05.18 |
申请号 |
US19980013468 |
申请日期 |
1998.01.26 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
WEN, JEMMY;CHOU, JIH-WEN |
分类号 |
H01L21/8229;H01L27/102;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8229 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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