A semiconductive detector includes a semiconductor substrate having electrodes formed at two opposite-facing surfaces thereof. A peripheral side-wall extends between the two opposite facing-surfaces, and an electrical insulator is formed on at least a portion of the side wall. An electrical conductor is provided over the insulator. A bias voltage may be applied to the conductor such that the electrical insulator and the conductor operate generally in a manner of a field effect transistor.
申请公布号
US5905264(A)
申请公布日期
1999.05.18
申请号
US19970905644
申请日期
1997.08.04
申请人
IMARAD IMAGING SYSTEMS LTD.
发明人
SHAHAR, ARIE;EL-HANANY, URI;TSIGELMAN, ALEX;GORIN, ALEX;KLIER, SHIMON;HALBERTAL, ELDAN