PE-TEOS process

摘要

An improvement in the properties of etch rate, mechanical stress, and chemical resistance of silicon layers obtained by plasma-enhanced chemical vapor deposition from mixtures of reactive gases such as oxygen and tetraethoxysilane is achieved by adding nitrogen gas to the reactive gas mixture. The addition of nitrogen gas is effective in improving the cited properties of the silicon oxide layers without altering the basic properties of the deposition process or degrading the other desirable properties of the silicon oxide layers in any substantial manner.