| 摘要 |
A method of manufacturing crown shape capacitors for use in semiconductor memories. High etching selectivity between BPSG (borophososilicate glass) and CVD-oxide (chemical vapor deposition oxide) is used to fabricate horizontal fins and a vertical pillar within a crown shaped capacitor. Utilizing the structure as a mold, the present invention can improve the performance of a capacitor by increasing the surface area of the capacitor. First, a composition layer consists of BPSG and silicon oxide formed on a substrate. A highly selective etching is used to etch the BPSG sublayers of the composition layer. Then, a contact hole is formed in the composition layer. Next, a first conductive layer is formed in the contact hole and a conductive spacers are formed on the side wall of the composition layer. Then, the composition layer is removed by BOE solution. Next, a dielectric film and a second conductive layer are respectively formed on the first conductive layer. Thus, a crown shape capacitor with a plurality of horizontal fins and a vertical pillar structure is formed.
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