发明名称 |
Method of making SRAM cell having single layer polysilicon thin film transistors |
摘要 |
A static metal oxide semiconductor random access memory (SRAM) having NMOS and thin film transistors (TFTs) formed from a single polysilicon layer, and a method for forming the same. The SRAM cell comprises a plurality of NMOS transistors and TFTs that are interconnected by a local interconnect structure. The single layer of poly is used to define the TFT bodies and gates of NMOS transistors in the SRAM cell. Each TFT comprises a single polysilicon layer comprising source gate and drain regions. During the fabrication process, exposed portions of the TFT polysilicon body and exposed regions of NMOS transistors react with a refractory metal silicide to form polycide and silicide regions, respectively. An amorphous silicon pattern also reacts with the refractory metal silicide to form a local interconnect structure connecting the silicided portions of the thin film transistors and the MOS transistors. This arrangement results in a TFT SRAM cell that can be implemented using simple fabrication techniques, such as single poly logic processes or ASIC processes.
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申请公布号 |
US5904512(A) |
申请公布日期 |
1999.05.18 |
申请号 |
US19970895364 |
申请日期 |
1997.07.16 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CHANG, KUANG-YEH;LIU, YOWJUANG W. |
分类号 |
H01L21/768;H01L21/8244;H01L21/84;H01L27/11;H01L27/12;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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