发明名称 |
Method of manufacturing a thin film transistor using anodic oxidation |
摘要 |
In a source/drain doping step in manufacturing a field effect transistor, particularly a thin-film transistor (TFT), high-speed boron ions are implanted in a state that an active layer in which to form the source and drain is covered with an insulating film, whereas phosphorus ions are implanted in a state that the surface of the active layer is exposed.
|
申请公布号 |
US5904509(A) |
申请公布日期 |
1999.05.18 |
申请号 |
US19940367427 |
申请日期 |
1994.12.30 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG, HONGYONG;OHNUMA, HIDETO;TAKEMURA, YASUHIKO |
分类号 |
H01L21/8238;H01L21/265;H01L21/28;H01L21/336;H01L21/77;H01L21/84;H01L27/092;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|