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发明名称
Method for polymer removal after etching
摘要
The polymeric residues which remain after the plasma-enhanced subtractive etching of polycrystalline layers in reactive halogen-containing gases are removed by a combination ashing in oxygen gas and subsequent removal with an organic solvent.
申请公布号
US5904570(A)
申请公布日期
1999.05.18
申请号
US19960650357
申请日期
1996.05.20
申请人
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人
CHEN, SEN-FU;YANG, BAO-RU;CHANG, WEN-CHENG;LIU, HENG-HSIN
分类号
H01L21/02;H01L21/3213;(IPC1-7):H01L21/306
主分类号
H01L21/02
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