| 摘要 |
A fabricating method for a ROM device uses the Shockly diode as a memory cell in the ROM device. In the present invention, the current of the memory cell is larger than that of a convention one. In the conventional ROM device, the code is programmed by making use of the channel transistor as the memory cell and implanting. In the present invention, the code is programmed by defining contact windows of the ROM device to prevent the ROM device from the shortcomings of limited current. In addition, the memory cells of the ROM device of a Shockly diode are isolated by an insulating layer, resulting in a smaller area for the device and improved integrity.
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