发明名称 Methods and apparatus for reducing charging during plasma processing
摘要 An apparatus and method in a plasma processing chamber for reducing charging of a wafer is described. A plasma generating element is configured to cause a plasma including ions and free radicals to be formed in a plasma generating region. A plasma diffusion region is configured so that plasma generated in the plasma generating region can diffuse through the plasma diffusion region. A conductive grid is positioned within the plasma diffusion region between the wafer and the plasma generating region. The conductive grid includes a mesh which is configured to trap a portion of the ions so that a portion of the ions are prevented from diffusing through the diffusion region to reach the wafer.
申请公布号 US5904571(A) 申请公布日期 1999.05.18
申请号 US19960671872 申请日期 1996.06.28
申请人 发明人
分类号 H01J37/32;(IPC1-7):H01L21/00;H05H1/00 主分类号 H01J37/32
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