发明名称 |
Methods and apparatus for reducing charging during plasma processing |
摘要 |
An apparatus and method in a plasma processing chamber for reducing charging of a wafer is described. A plasma generating element is configured to cause a plasma including ions and free radicals to be formed in a plasma generating region. A plasma diffusion region is configured so that plasma generated in the plasma generating region can diffuse through the plasma diffusion region. A conductive grid is positioned within the plasma diffusion region between the wafer and the plasma generating region. The conductive grid includes a mesh which is configured to trap a portion of the ions so that a portion of the ions are prevented from diffusing through the diffusion region to reach the wafer.
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申请公布号 |
US5904571(A) |
申请公布日期 |
1999.05.18 |
申请号 |
US19960671872 |
申请日期 |
1996.06.28 |
申请人 |
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发明人 |
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分类号 |
H01J37/32;(IPC1-7):H01L21/00;H05H1/00 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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