| 摘要 |
A semiconductor component is disclosed, having a device layer comprising at least one lateral insulating area, such as a trench, the walls of said lateral insulating area being covered with a gettering layer functioning as a getter when processing the semiconductor component. Preferably, the gettering layer is substantially without acceptor and/or donor type impurities, or the concentration of acceptor and/or donor type impurities is not greater than the concentration of acceptor and/or donor type impurities in the trench wall. The gettering layer comprises a gettering material such as polysilicon or porous silicon, or a silicide, and is covered with a layer of an insulating material. A method for the manufacturing of such a component is also disclosed. |
