发明名称 |
Light emitting semiconductor device using nitrogen-Group III compound |
摘要 |
Disclosed is a light-emitting semiconductor device which comprises an N-layer of N-type nitrogen-Group III compound semiconductor satisfying the formula AlxGayIn1-x-yN, inclusive of x=0, y=0 and x=y=0, a P-layer of P-type nitrogen-Group III compound semiconductor satisfying the formula AlxGayIn1-x-yN, inclusive of x=0, y=0 and x=y=0 and a Zn doped semi-insulating I-layer of nitrogen-Group III compound semiconductor satisfying the formula AlxGayIn1-x-yN, inclusive of x=0, y=0 and x=y=0. The semi-insulating I-layer has a 20 to 3000 ANGSTROM thickness and can emit light in the range of 485 to 490 nm. By employing the I-layer, the light-emitting diode as a whole can emit light in the range of 450 to 480 nm.
|
申请公布号 |
US5905276(A) |
申请公布日期 |
1999.05.18 |
申请号 |
US19970968896 |
申请日期 |
1997.11.06 |
申请人 |
AKASAKI, ISAMU;AMANO, HIROSHI;TOYODA GOSEI CO., LTD. |
发明人 |
MANABE, KATSUHIDE;KOTAKI, MASAHIRO;KATO, HISAKI;SASSA, MICHINARI;AKASAKI, ISAMU;AMANO, HIROSHI |
分类号 |
H01L33/08;H01L33/12;H01L33/14;H01L33/32;H01L33/40;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|