Method for fabricating ohmic electrode and multi-layered structure for ohmic fabricating electrode

摘要

An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics is disclosed. A non-single crystal InAs layer, Ni film, WSi film and W film are sequentially deposited on an n+-type GaAs substrate by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is then annealed first at, e.g. 300 DEG C. for 30 minutes and next at, e.g. 650 DEG C. for one second to fabricate an ohmic electrode.