发明名称 |
Method of resistless patterning of a substrate for implantation |
摘要 |
A method of ion implanting a substrate is disclosed, which includes providing a substrate having a surface. A sacrificial layer of semiconductor material is formed on the surface and resistlessly patterning to define masked and unmasked portions. The unmasked portions are etched away to form an implantation mask on the substrate. Ions are implanted in the substrate underlying the etched away unmasked portions and the sacrificial layer is removed.
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申请公布号 |
US5904552(A) |
申请公布日期 |
1999.05.18 |
申请号 |
US19970806270 |
申请日期 |
1997.02.25 |
申请人 |
MOTOROLA, INC. |
发明人 |
SHIRALAGI, KUMAR;THOMPSON, DANNY L. |
分类号 |
H01L21/033;H01L21/265;H01L21/266;(IPC1-7):H01L21/425 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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