发明名称 |
Tape cast silicon carbide dummy wafer |
摘要 |
This invention relates to tape casting a silicon carbide slip to eventually produce a silicon carbide wafer having a thickness of between 0.5 and 1 mm and a diameter of at least 150 mm, the wafer preferably having a strength of at least 30 MPa, and a porosity wherein at least 85% of the pores are no larger than 12 microns.
|
申请公布号 |
US5904892(A) |
申请公布日期 |
1999.05.18 |
申请号 |
US19960625383 |
申请日期 |
1996.04.01 |
申请人 |
SAINT-GOBAIN/NORTON INDUSTRIAL CERAMICS CORP. |
发明人 |
HOLMES, THOMAS M. |
分类号 |
C04B35/565;B28B1/14;C04B35/573;C04B35/622;C04B38/00;H01L21/02;H01L21/302;(IPC1-7):C04B35/565 |
主分类号 |
C04B35/565 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|