发明名称 |
Heating device, method of manufacturing the same, and processing apparatus using the same |
摘要 |
A heating device is formed by a heating plate formed of silica and having a heating surface for heating an object to be heated, a heating element having a predetermined pattern and fixed to a surface opposing the heating surface of the heating plate, and a reflecting plate formed of silica and brought into tight contact with the surface of the heating plate on which the heating element is formed. This heating device is arranged in a processing vessel in a CVD apparatus, and a semiconductor wafer is placed on the heating device. A process gas is supplied into the processing vessel while the semiconductor wafer is heated, thereby forming a predetermined film on the semiconductor wafer.
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申请公布号 |
US5904872(A) |
申请公布日期 |
1999.05.18 |
申请号 |
US19950534312 |
申请日期 |
1995.09.27 |
申请人 |
TOKYO ELECTRON LIMITED;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
ARAMI, JUNICHI;ISHIKAWA, KENJI;USHIKAWA, HARUNORI;YANAGISAWA, ISAO;KAWADA, NOBUO;MOGI, HIROSHI |
分类号 |
C23C16/46;H01L21/00;H05B3/26;H05B3/28;(IPC1-7):H05B3/68;H05B3/00;C23C16/00 |
主分类号 |
C23C16/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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